VR-CVD SiC is designed for modeling of SiC bulk
crystal growth by Chemical Vapor Deposition.
Global Heat Transfer Problem in a System for SiC Crystal
- Inductive heating. The computation of the Joule heat
sources due to inductive heating is carried out by solving the Maxwell
- Conductive heat transfer in solid materials. The
thermal conductivity of the materials used in the growth system can be
prescribed by the user as a function of temperature. Anisotropic thermal
conductivity can be assigned.
- Convective and radiative heat transfer in transparent
gas blocks. The view-factor technique is used to model the radiation heat
in the Reactor
- Non-isothermal flow of gas mixture.
- Multi-component diffusion of reactive species.
- Homogeneous chemistry involving chemical
decomposition of the precursors.
- Support of 2 types of precursors: Hydrides
(C3H8 and SiH4) and Chlorides
(C3H8 and SiCl4).
- Prospective Development: Support of growth
and SiH2Cl2 precursors.
Heterogeneous Chemical Processes
- Chemically reactive surfaces of the seed, growing
crystal and reactor side walls. A quasi-thermodynamic model is used to
describe the mass exchange between the vapor and solid surface.
- Crystal and wall deposit evolution during the growth
within the quasi-stationary approximation.
- Computation of the thermal stress distribution in the
crystal, including the density of gliding dislocations in the crystal
calculated on the assumption of a full stress relaxation due to plastic
- Analysis of the propagation of threading dislocations
from the seed into the growing crystal. It includes 2D propagation of
dislocations originating from the seed in a selected vertical crystal
cross-section and 3D analysis yielding the dislocation outcrop mapping
in a set of horizontal crystal cuts.
VR-CVD SiC is supplied in the following configurations:
- Steady State
- Basic Configuration (Long Term Growth)
- Basic Configuration with the Threading Dislocations Module
Hot-line support is provided on request. The support includes free of charge supply
of updated versions released during the license period and technical consulting
on the VR-CVD SiC operation.