CVD SiC

 







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Fig. 1.
Specification of the growth system in VR-CVD SiC

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Fig. 2.
Temperature distribution and flow pattern

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Fig. 3.
Si partial pressure distributions in the growth region. Growth from
SiCl4 and C3H8

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Fig. 4.
C2H2 partial pressure distributions in the growth region.
Growth from SiCl4 and C3H8

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Fig. 5.
Comparison with experiment: growth rate vs. C3H8
flow rate. Experiment: S. Nigal et al., JCG 284, 112 (2005).

VR-CVD SiC is designed for modeling of SiC bulk
crystal growth by Chemical Vapor Deposition.

Global Heat Transfer Problem in a System for SiC Crystal
Growth

  • Inductive heating. The computation of the Joule heat
    sources due to inductive heating is carried out by solving the Maxwell
    equations.
  • Conductive heat transfer in solid materials. The
    thermal conductivity of the materials used in the growth system can be
    prescribed by the user as a function of temperature. Anisotropic thermal
    conductivity can be assigned.
  • Convective and radiative heat transfer in transparent
    gas blocks. The view-factor technique is used to model the radiation heat
    exchange.

Species Transport
in the Reactor

  • Non-isothermal flow of gas mixture.
  • Multi-component diffusion of reactive species.
  • Homogeneous chemistry involving chemical
    decomposition of the precursors.
  • Support of 2 types of precursors: Hydrides
    (C3H8 and SiH4) and Chlorides
    (C3H8 and SiCl4).
  • Prospective Development: Support of growth
    from C3H8
    and SiH2Cl2 precursors.

Heterogeneous Chemical Processes

  • Chemically reactive surfaces of the seed, growing
    crystal and reactor side walls. A quasi-thermodynamic model is used to
    describe the mass exchange between the vapor and solid surface.
  • Crystal and wall deposit evolution during the growth
    within the quasi-stationary approximation.

Crystal Characterization

  • Computation of the thermal stress distribution in the
    crystal, including the density of gliding dislocations in the crystal
    calculated on the assumption of a full stress relaxation due to plastic
    deformation.
  • Analysis of the propagation of threading dislocations
    from the seed into the growing crystal. It includes 2D propagation of
    dislocations originating from the seed in a selected vertical crystal
    cross-section and 3D analysis yielding the dislocation outcrop mapping
    in a set of horizontal crystal cuts.

Available Configurations

VR-CVD SiC is supplied in the following configurations:

  • Steady State
  • Basic Configuration (Long Term Growth)
  • Basic Configuration with the Threading Dislocations Module

Support

Hot-line support is provided on request. The support includes free of charge supply
of updated versions released during the license period and technical consulting
on the VR-CVD SiC operation.

 

 

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