On this web site you can find information about STR software products for modeling of bulk crystal growth, epitaxy and devices. Here we also publish information about our recent publications, conferences we plan to attend and software updates.
Recently STR has addressed modeling of SiC growth from solution by top seeded solution growth technique (TSSG) and co-authored a publication in JCG.
Full text of a new publication “Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects” by Ilya E. Titkov, Sergey Yu. Karpov (STR Group), Amit Yadav, Denis Mamedov, Vera L. Zerova and Edik Rafailov*, Materials 2017, 10(11), 1323; doi: 10.3390/ma10111323 is now available online.
STR will attend ICSCRM 2017 in Washington, D.C. on September 17-22, 2017. We will be attending as exhibitors and present two posters: “Transport Phenomena in PVT Growth of SiC Bulk Crystals” and “Model of Growth of N- and Al-Doped SiC Structures in the SiH4 + C3H8 + HCl System”
At ACCGE-21 and OMVPE-18 in Santa Fe, New Mexico, on July 30 – August 4, 2017 STR will have an oral presentation on Zinc Distribution and Dislocation Density Evolution in CZT Bridgeman Crystal Growth and another one on MOCVD of GA2O3
STR will participate in ICNS12 on 24-28 July 2017. In Strasbourg, France, we will make an oral presentation “Effect of carrier localization on recombination processes and efficiency of polar LEDs operating in the “green gap””