STR Group



On this web site you can find information about STR software products for modeling of bulk crystal growth, epitaxy and devices. Here we also publish information about our recent publications, conferences we plan to attend and software updates.


Growth from Melt and Solutions



For analysis and optimization of Cz, LEC, VCz, and Bridgman growth of semiconductor and semitransparent crystals, STR offers CGSim software.


CGSim 18.2 has been released

STR Group has released a new version of crystal growth simulation software CGSim. New version has extended CGSim capabilities for modeling and optimization of rapidly developing technologies of SiC and GaN crystal growth from solution. 


STR will participate in exhibition at CS MANTECH conference that will be held in Austin, Texas on May 7th – 10th, 2018. See for details.

SiC growth by TSSG

Recently STR has addressed modeling of SiC growth from solution by top seeded solution growth technique (TSSG) and co-authored a publication in JCG.


STR will attend ICSCRM 2017 in Washington, D.C. on September 17-22, 2017. We will be attending as exhibitors and present two posters: “Transport Phenomena in PVT Growth of SiC Bulk Crystals” and “Model of Growth of N- and Al-Doped SiC Structures in the SiH4 + C3H8 + HCl System”

ACCGE-21 and OMVPE-18

At ACCGE-21 and OMVPE-18 in Santa Fe, New Mexico, on July 30 – August 4, 2017 STR will have an oral presentation on Zinc Distribution and Dislocation Density Evolution in CZT Bridgeman Crystal Growth and another one on MOCVD of GA2O3


STR will participate in ICNS12 on 24-28 July 2017. In Strasbourg, France, we will make an oral presentation “Effect of carrier localization on recombination processes and efficiency of polar LEDs operating in the “green gap””